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ON Semiconductor 2SB815-6-TB-E

ON Semiconductor

2SB815-6-TB-E


Transistors Bipolar - BJT BIP PNP 0.7A 15V

$ 0.80

1387 1387 Items In Stock

Specification of 2SB815-6-TB-E

DC Collector/Base Gain hFE Min 200
Continuous Collector Current - 700 uA
Minimum Operating Temperature - 55 C
Manufacturer ON Semiconductor
Packaging Reel
Maximum Power Dissipation 200 mW
Alternate Part No. 863-2SB815-6-TB-E
Brand ON Semiconductor
Emitter- Base Voltage VEBO - 5 V
Configuration Single
Collector- Base Voltage VCBO - 20 V
Maximum DC Collector Current 1.5 A
Gain Bandwidth Product fT 250 MHz
Maximum Operating Temperature + 125 C
Collector- Emitter Voltage VCEO Max 15 V
Transistor Polarity PNP
DC Current Gain hFE Max 400
Collector-Emitter Saturation Voltage - 15 mV
Product Category Transistors Bipolar - BJT
Manufacturer Part No. 2SB815-6-TB-E
Mounting Style SMD/SMT
Package/Case CP-3
Series 2SB815