ON Semiconductor 2SA1418S-TD-E View larger

ON Semiconductor 2SA1418S-TD-E

ON Semiconductor

2SA1418S-TD-E


Transistors Bipolar - BJT BIP PNP 0.7A 160V

$ 1.13

1414 1414 Items In Stock

Specification of 2SA1418S-TD-E

Collector- Base Voltage VCBO - 180 V, 180 V
Transistor Polarity PNP
DC Current Gain hFE Max 400
Product Category Transistors Bipolar - BJT
Packaging Reel
Alternate Part No. 863-2SA1418S-TD-E
Collector- Emitter Voltage VCEO Max - 160 V, 160 V
Continuous Collector Current - 0.7 A, 0.7 A
Series 2SA1418
Maximum Power Dissipation 1.3 W
Minimum Operating Temperature - 55 C
Gain Bandwidth Product fT 120 MHz
Brand ON Semiconductor
Emitter- Base Voltage VEBO - 6 V, 6 V
Maximum Operating Temperature + 150 C
Collector-Emitter Saturation Voltage - 0.2 V, 0.12 V
Configuration Single
DC Collector/Base Gain hFE Min 100
Manufacturer Part No. 2SA1418S-TD-E
Manufacturer ON Semiconductor
Package/Case PCP
Mounting Style SMD/SMT