ON Semiconductor 2SA1417S-TD-E View larger

ON Semiconductor 2SA1417S-TD-E

ON Semiconductor

2SA1417S-TD-E


Transistors Bipolar - BJT BIP PNP 2A 100V

$ 1.42

3714 3714 Items In Stock

Specification of 2SA1417S-TD-E

Maximum DC Collector Current - 3 A
Configuration Single
Mounting Style SMD/SMT
Product Category Transistors Bipolar - BJT
Package/Case SC-62
Collector- Emitter Voltage VCEO Max - 100 V
Maximum Operating Temperature + 150 C
Collector- Base Voltage VCBO - 120 V
Continuous Collector Current - 2 A
Manufacturer ON Semiconductor
Maximum Power Dissipation 1.5 W
Packaging Reel
Gain Bandwidth Product fT 120 MHz
Series 2SA1417
Alternate Part No. 863-2SA1417S-TD-E
DC Current Gain hFE Max 400
Manufacturer Part No. 2SA1417S-TD-E
Emitter- Base Voltage VEBO - 6 V
Minimum Operating Temperature - 55 C
Brand ON Semiconductor
Transistor Polarity PNP
Collector-Emitter Saturation Voltage - 0.22 V