ON Semiconductor MTB30P06VT4G View larger

ON Semiconductor MTB30P06VT4G

ON Semiconductor

MTB30P06VT4G


MOSFET PFET D2PAK 60V 30A 80mOhm

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$ 3.54

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Specification of MTB30P06VT4G

Rds On - Drain-Source Resistance 80 mOhms
Mounting Style SMD/SMT
Package/Case D2PAK-2
Product Category MOSFET
Rise Time 25.9 ns
Configuration Single
Series MTB30P06V
Typical Turn-Off Delay Time 98 ns
Id - Continuous Drain Current 30 A
Transistor Polarity P-Channel
Brand ON Semiconductor
Vgs - Gate-Source Breakdown Voltage 15 V
Vds - Drain-Source Breakdown Voltage - 60 V
Fall Time 52.4 ns
Pd - Power Dissipation 3 W
Alternate Part No. 863-MTB30P06VT4G
Channel Mode Enhancement
Minimum Operating Temperature - 55 C
Manufacturer Part No. MTB30P06VT4G
Maximum Operating Temperature + 175 C
Manufacturer ON Semiconductor
Packaging Reel
Forward Transconductance - Min 7.9 S

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