ON Semiconductor CPH3109-TL-E View larger

ON Semiconductor CPH3109-TL-E

ON Semiconductor

CPH3109-TL-E


Transistors Bipolar - BJT BIP PNP 3A 30V

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$ 0.68

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Specification of CPH3109-TL-E

Brand ON Semiconductor
Maximum Power Dissipation 0.9 W
Series CPH3109
Manufacturer ON Semiconductor
Package/Case CPH-3
Configuration Single
Alternate Part No. 863-CPH3109-TL-E
Emitter- Base Voltage VEBO - 5 V
Gain Bandwidth Product fT 380 MHz
Maximum DC Collector Current - 5 A
Packaging Reel
Mounting Style SMD/SMT
Maximum Operating Temperature + 150 C
Product Category Transistors Bipolar - BJT
Collector- Base Voltage VCBO - 30 V
DC Collector/Base Gain hFE Min 200
DC Current Gain hFE Max 560
Continuous Collector Current - 3 A
Manufacturer Part No. CPH3109-TL-E
Collector-Emitter Saturation Voltage - 105 mV, - 155 mV
Collector- Emitter Voltage VCEO Max - 30 V
Transistor Polarity PNP

More info

CPH3109/CPH3209. Bipolar Transistor. (–)30V, (–)3A, Low VCE(sat), (PNP)NPN Single CPH3. Stresses exceeding Maximum Ratings may damage the device. [1]

CPH3109/CPH3209 is Bipolar Transistor, (-)30V, (-)3A, Low VCE(sat), (PNP) NPN Single CPH3 for DC-DC Concerter Application. [2]

CPH3109/CPH3209. SANYO Electric Co.,Ltd. Semiconductor Company. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 ... [3]

CPH3109-TL-E Specifications: Transistor Type: PNP ; Voltage - Collector Emitter Breakdown (Max): 30V ; Current - Collector (Ic) (Max): 3A ; Power - Max: ... [4]

References