ON Semiconductor BD435G View larger

ON Semiconductor BD435G

ON Semiconductor

BD435G


Transistors Bipolar - BJT BIP NPN 4A 22V

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$ 1.51

475 475 Items In Stock

Specification of BD435G

Configuration Single
Brand ON Semiconductor
Transistor Polarity NPN
Manufacturer ON Semiconductor
Maximum DC Collector Current 4 A
Maximum Power Dissipation 36000 mW
Alternate Part No. 863-BD435G
Emitter- Base Voltage VEBO 5 V
Gain Bandwidth Product fT 3 MHz
Maximum Operating Temperature + 150 C
Series BD435
Manufacturer Part No. BD435G
Package/Case TO-225-3
DC Collector/Base Gain hFE Min 40
Mounting Style Through Hole
Product Category Transistors Bipolar - BJT
Minimum Operating Temperature - 55 C
Collector- Base Voltage VCBO 32 V
Collector- Emitter Voltage VCEO Max 32 V

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BD435G datasheet, BD435G circuit, BD435G data sheet : ONSEMI - Plastic Medium-Power Silicon NPN Transistors ,alldatasheet, datasheet, Datasheet search ... [1]

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BD435G ON Semiconductor Bipolar Transistors - BJT BIP NPN 4A 22V datasheet , inventory, & pricing. [3]

References