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ON Semiconductor BC639RL1G

ON Semiconductor

BC639RL1G


Transistors Bipolar - BJT 500mA 80V NPN

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$ 0.72

5193 5193 Items In Stock

Specification of BC639RL1G

Maximum DC Collector Current 1 A
Emitter- Base Voltage VEBO 5 V
Maximum Power Dissipation 625 mW
Brand ON Semiconductor
Configuration Single
Gain Bandwidth Product fT 200 MHz
Manufacturer Part No. BC639RL1G
Transistor Polarity NPN
Mounting Style Through Hole
Alternate Part No. 863-BC639RL1G
Collector- Base Voltage VCBO 80 V
Continuous Collector Current 1 A
Product Category Transistors Bipolar - BJT
Collector- Emitter Voltage VCEO Max 80 V
Manufacturer ON Semiconductor
Collector-Emitter Saturation Voltage 0.5 V
Maximum Operating Temperature + 150 C
Series BC639
DC Collector/Base Gain hFE Min 25
Package/Case TO-92-3 (TO-226)
Packaging Reel
Minimum Operating Temperature - 55 C

More info

BC639RL1G datasheet, BC639RL1G circuit, BC639RL1G data sheet : ONSEMI - High Current Transistors ,alldatasheet, datasheet, Datasheet search site for ... [1]

BC639RL1G from ON Semiconductor at Allied Electronics. [2]

BC639RL1G ON Semiconductor Bipolar Transistors - BJT 500mA 80V NPN Bipolar Transistors - BJT Product Data. [3]

References