ON Semiconductor 2SB817C-1E View larger

ON Semiconductor 2SB817C-1E

ON Semiconductor

2SB817C-1E


Transistors Bipolar - BJT BIP PNP 12A 140V

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$ 5.24

260 260 Items In Stock

Specification of 2SB817C-1E

Transistor Polarity PNP
Collector- Base Voltage VCBO 160 V
DC Collector/Base Gain hFE Min 100
Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 2 V
Manufacturer Part No. 2SB817C-1E
Brand ON Semiconductor
DC Current Gain hFE Max 200 A
Continuous Collector Current 12 A
Series 2SB817C
Alternate Part No. 863-2SB817C-1E
Maximum DC Collector Current 12 A
Mounting Style Through Hole
Manufacturer ON Semiconductor
Collector- Emitter Voltage VCEO Max 140 V
Maximum Power Dissipation 120 W
Package/Case TO-3PB
Product Category Transistors Bipolar - BJT

More info

2SB817C-1E ON Semiconductor Bipolar Transistors - BJT BIP PNP 12A 140V ... ON Semiconductor 2SB817C-1E Enlarge. Mouser Part #: 863-2SB817C-1E. [1]

Compare 2sb817c-1e price and availability by authorized and independent electronic ... 2SB817C-1E Distri #: 863-2SB817C-1E, ON Semiconductor, Bipolar ... [2]

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