ON Semiconductor 2SA608NG-NPA-AT View larger

ON Semiconductor 2SA608NG-NPA-AT

ON Semiconductor

2SA608NG-NPA-AT


Transistors Bipolar - BJT BIP PNP 0.15A 50V

$ 0.61

3273 3273 Items In Stock

Specification of 2SA608NG-NPA-AT

Alternate Part No. 863-2SA608NG-NPA-AT
Product Category Transistors Bipolar - BJT
Configuration Single
Manufacturer ON Semiconductor
Collector-Emitter Saturation Voltage - 0.3 V, 0.3 V
Collector- Base Voltage VCBO - 50 V, 60 V
Package/Case TO-92
Gain Bandwidth Product fT 200 MHz
Transistor Polarity PNP
DC Current Gain hFE Max 560
DC Collector/Base Gain hFE Min 70
Maximum Operating Temperature + 150 C
Collector- Emitter Voltage VCEO Max - 50 V, 50 V
Mounting Style Through Hole
Emitter- Base Voltage VEBO - 6 V, 6 V
Manufacturer Part No. 2SA608NG-NPA-AT
Packaging Reel
Continuous Collector Current - 150 mA, 150 mA
Maximum Power Dissipation 500 mW
Minimum Operating Temperature - 55 C
Brand ON Semiconductor