ON Semiconductor 2N5551RLRPG View larger

ON Semiconductor 2N5551RLRPG

ON Semiconductor

2N5551RLRPG


Transistors Bipolar - BJT 600mA 180V NPN

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$ 0.70

5675 5675 Items In Stock

Specification of 2N5551RLRPG

Brand ON Semiconductor
Collector- Base Voltage VCBO 180 V
Maximum Power Dissipation 625 mW
Transistor Polarity NPN
Packaging Ammo Pack
Manufacturer ON Semiconductor
Collector- Emitter Voltage VCEO Max 160 V
Gain Bandwidth Product fT 300 MHz
Package/Case TO-92-3 (TO-226)
Minimum Operating Temperature - 55 C
Alternate Part No. 863-2N5551RLRPG
Series 2N5551
Configuration Single
Manufacturer Part No. 2N5551RLRPG
Mounting Style Through Hole
Product Category Transistors Bipolar - BJT
Collector-Emitter Saturation Voltage 0.25 V
Emitter- Base Voltage VEBO 6 V
Maximum DC Collector Current 0.6 A
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hFE Min 80
Continuous Collector Current 0.6 A

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