ON Semiconductor 2N5401G View larger

ON Semiconductor 2N5401G

ON Semiconductor

2N5401G


Transistors Bipolar - BJT 500mA 160V PNP

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$ 0.80

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Specification of 2N5401G

DC Collector/Base Gain hFE Min 50
Collector- Emitter Voltage VCEO Max 150 V
Minimum Operating Temperature - 55 C
Maximum DC Collector Current 0.6 A
Gain Bandwidth Product fT 300 MHz
Brand ON Semiconductor
Series 2N5401
Configuration Single
Product Category Transistors Bipolar - BJT
Collector- Base Voltage VCBO 160 V
Manufacturer Part No. 2N5401G
Continuous Collector Current 0.6 A
Alternate Part No. 863-2N5401G
Maximum Power Dissipation 625 mW
Package/Case TO-92-3 (TO-226)
Manufacturer ON Semiconductor
Transistor Polarity PNP
Packaging Bulk
Collector-Emitter Saturation Voltage 0.5 V
Emitter- Base Voltage VEBO 5 V
Mounting Style Through Hole
Maximum Operating Temperature + 150 C

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