ON Semiconductor 2N5195G View larger

ON Semiconductor 2N5195G

ON Semiconductor


Transistors Bipolar - BJT 4A 80V 40W PNP

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$ 1.13

433 433 Items In Stock

Specification of 2N5195G

Maximum Operating Temperature + 150 C
Minimum Operating Temperature - 65 C
Continuous Collector Current 4 A
Product Category Transistors Bipolar - BJT
Mounting Style Through Hole
Gain Bandwidth Product fT 2 MHz
Collector- Base Voltage VCBO 80 V
Manufacturer ON Semiconductor
Series 2N5195
Package/Case TO-225-3
Collector- Emitter Voltage VCEO Max 80 V
Transistor Polarity PNP
Packaging Bulk
Maximum Power Dissipation 40 W
Alternate Part No. 863-2N5195G
Configuration Single
Collector-Emitter Saturation Voltage 1.4 V
Brand ON Semiconductor
DC Collector/Base Gain hFE Min 20
Emitter- Base Voltage VEBO 5 V
Maximum DC Collector Current 4 A
Manufacturer Part No. 2N5195G

More info

2N5195G ON Semiconductor Bipolar Transistors - BJT 4A 80V 40W PNP Bipolar Transistors - BJT Pricing and Availability. [1]

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2N5194G, 2N5195G. Silicon PNP Power. Transistors. These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. [3]

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