ON Semiconductor 2N3055AG View larger

ON Semiconductor 2N3055AG

ON Semiconductor

2N3055AG


Transistors Bipolar - BJT 15A 60V 115W NPN

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$ 12.59

183 183 Items In Stock

Specification of 2N3055AG

Brand ON Semiconductor
Maximum Power Dissipation 115 W
Series 2N3055A
Collector- Base Voltage VCBO 200 V
Collector-Emitter Saturation Voltage 1.1 V
Manufacturer ON Semiconductor
Alternate Part No. 863-2N3055AG
Transistor Polarity NPN
Collector- Emitter Voltage VCEO Max 60 V
Product Category Transistors Bipolar - BJT
Configuration Single
DC Collector/Base Gain hFE Min 10
Manufacturer Part No. 2N3055AG
Maximum DC Collector Current 15 A
Minimum Operating Temperature - 65 C
Mounting Style Through Hole
Packaging Tray
Continuous Collector Current 15 A
Package/Case TO-204-2 (TO-3)
Gain Bandwidth Product fT 6 MHz
Emitter- Base Voltage VEBO 7 V
Maximum Operating Temperature + 150 C

More info

Semiconductor Components Industries, LLC, 2013. September, 2013 − Rev. 7. 1. Publication Order Number: 2N3055A/D. 2N3055AG (NPN),. MJ15015G (NPN),. [1]

A description for this result is not available because of this site's robots.txt – learn more. [2]

2N3055AG datasheet, 2N3055AG circuit, 2N3055AG data sheet : Complementary Silicon High?Power Transistors ,ic-datasheet-pdf, 2N-3, General Purpose ... [3]

References